Improve Electronic Materials for Aerospace

Electronic materials appear as components in sensors, cockpit displays, and computing devices (chips). Accelrys solutions can help you predict fundamental properties of electronic materials (such as band gaps, dielectric constants), mechanical properties (such as elastic constants and hardness), and optical properties (such as reflectance).

Related Products and Services:

• Materials Studio DMol³ - density functional theory (DFT) quantum mechanical code to simulate chemical processes and predict properties
• Materials Studio CASTEP - density functional theory (DFT) quantum mechanical code to simulate the properties of solids, interfaces, and surfaces
• Materials Studio GULP - range of materials forcefields for predicting structural, electronic, and materials properties and for modeling dynamic processes
• Contract Research & Scientific Consulting Services - can help you find solutions to your specific design problems.

Design Improved Electrical Conductors and Insulators

Related Case Studies:

Towards Smaller, Faster Electronic Devices at the SFI Nanoscience Laboratory and
the University of North Carolina (Trinity College Dublin, University of North Carolina at Chapel Hill)

A Theoretical Approach to Investigating Gate Dielectrics (Motorola)

Discover Improved Emission Devices for Electronic Displays

Related Case Studies:

Effect of Adsorbates on Field Emission from Carbon Nanotubes (Motorola)

Create More Sensitive and Specific Devices for Both Mechanical and Chemical Sensing

Related Case Studies:

Understanding the Nitrogen Dioxide Sensing Mechanism of Tin Dioxide Nanoribbons
(Brookhaven & Lawrence Berkeley National Laboratories)

Application of Carbon Nanotubes as Electromechanical Sensors (NASA)

Nanotechnology ROI at e2v Technologies - an Interview with Dr Richard Gilbert, Principal Scientist (Biosensors) (e2v Technologies)

Bibliography: Improving Electronic Materials for Aerospace

1. “Work function control at metal–oxide interfaces in CMOS,” K. Tse, J. Robertson, Materials Science in Semiconductor Processing 9 (2006) 964–968.
2. “Theoretical investigations on electronic and optical properties of rock-salt gallium nitride,” Z.W. Chen, M.Y. Lv, L.X. Li, Q. Wang, X.Y. Zhang, R.P. Liu, Thin Solid Films 515 (2006) 2433–2436.
3. “Formation of optically active osmium silicide in silica using ion implantation and thermal annealing,” L.J. Mitchell, O.W. Holland, A. Neogi, J. Li, F.D. McDaniel, Journal of Non-Crystalline Solids 352 (2006) 2408–2410.
4. “Thermodynamic stability and band alignment at a metal–high-k dielectric interface,” A.A. Demkov, Phys. Rev. B 74 (2006) 085310.
5. “Silicon doping induced bending in aluminum nanowires,” Hung-Jen Chen, Yen-Yu Chen, Chin-Hua Hsieh, Su-Jien Lin,Li-Jen Chou, and Wen-Kuang Hsu, Appl. Phys. Lett.90 (2007) 023111.